Title :
Effects on electrical characteristics of commercially available Si and GaAs diodes exposed to californium-252 radiation
Author :
Omar, Nuurul Iffah Che ; Hasbullah, Nurul Fadzlin ; Rashid, Nahrul Khair Alang Md ; Abdullah, Jaafar
Author_Institution :
Dept. of Electr. & Electron. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
Abstract :
The aim of this research is to investigate the effects of neutron irradiation using Cf-252 neutron source on different types of commercially available Si and GaAs diodes. Pre and post irradiation effects are compared by analyzing their respective forward bias (FB) and reverse bias (RB) current-voltage (I-V) characteristics. It was discovered that, at low neutron dose of up to 178.63mSv, the electrical characteristics of silicon diodes improved as indicated by a reduction in FB and RB leakage current, ideality factor and series resistance. However, GaAs diodes show a significant leakage current increment in RB which is interpreted as being due to damage displacement.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; leakage currents; neutron effects; semiconductor diodes; silicon; Cf-252 neutron source; FB leakage current reduction; GaAs; I-V characteristics; RB leakage current reduction; Si; californium-252 radiation; current-voltage characteristics; electrical characteristics; forward bias; ideality factor; low neutron dose; neutron irradiation effect; reverse bias; series resistance; silicon diodes; Gallium arsenide; Leakage current; Neutrons; Radiation effects; Schottky diodes; Silicon; commercial diode; defect reordering; displacement damage; leakage current; radiation effects; semiconductors;
Conference_Titel :
Computer and Communication Engineering (ICCCE), 2012 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-0478-8
DOI :
10.1109/ICCCE.2012.6271177
