DocumentCode
3007740
Title
Effects of V/III Ratios for InP Nanowires Grown on Si Substrates
Author
Chuang, Linus C. ; Moewe, Michael ; Crankshaw, Shanna ; Chang-Hasnain, Connie
Author_Institution
Univ. of California at Berkeley, Berkeley
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report the effects of V/III ratio on the structural and optical properties for InP nanowires (NWs) grown on Si substrates. Non-tapered NWs with a sharp photoluminescence peak and intense emission are achieved.
Keywords
III-V semiconductors; indium compounds; nanowires; optical materials; photoluminescence; semiconductor growth; InP; Si; V-III ratio; intense emission; nontapered nanowire growth; photoluminescence peak; silicon substrates; structural properties; Gold; III-V semiconductor materials; Indium phosphide; Nanowires; Optical buffering; Photoluminescence; Shape; Stimulated emission; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452749
Filename
4452749
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