Title :
Photoluminescence of GaInAsP/InP Single Quantum Wires With Lateral Widths Down To 6 nm Fabricated by Dry Etching and Regrowth
Author :
Itoh, Hayato ; Yoshita, Masahiro ; Akiyama, Hidenori
Author_Institution :
Univ. of Tokyo, Chiba
Abstract :
We measured photoluminescence of GalnAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.
Keywords :
III-V semiconductors; arsenic compounds; etching; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wires; GaInAsP-InP; dry etching; lateral quantum confinement energies; photoluminescence; regrowth; single quantum wires; Dry etching; Indium phosphide; Photoluminescence; Potential well; Rough surfaces; Size measurement; Solid state circuits; Surface roughness; Wet etching; Wires;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452751
