Title :
Intersubband Transitions in Lattice-Matched AlInN/GaN Heterostructures
Author :
Malis, Oana ; Edmunds, Colin ; Li, Donghui ; Manfra, Michael J.
Author_Institution :
Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
fDate :
June 28 2010-July 1 2010
Abstract :
Intersubband transitions in lattice-matched AlInN/GaN heterostructures grown by molecular-beam epitaxy were studied with infrared absorption, photocurrent and resonant tunneling measurements. Strong near-infrared absorption was observed at room temperature in the technologically relevant 2.1-2.9 μm. The results show the potential of lattice-matched nitrides for near- and far-infrared intersubband devices such as lasers and detectors.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; infrared spectra; molecular beam epitaxial growth; photoconductivity; photoemission; resonant tunnelling; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors; AlInN-GaN; far-infrared intersubband devices; infrared absorption; intersubband transitions; lattice-matched heterostructure; lattice-matched nitrides; molecular-beam epitaxy; near-infrared absorption; near-infrared intersubband devices; photocurrent; resonant tunneling; temperature 293 K to 298 K; Electromagnetic wave absorption; Gallium nitride; Infrared detectors; Infrared spectra; Molecular beam epitaxial growth; Optical materials; Optical scattering; Phonons; Quantum cascade lasers; Semiconductor materials;
Conference_Titel :
Micro/Nano Symposium (UGIM), 2010 18th Biennial University/Government/Industry
Conference_Location :
West Lafayette, IN
Print_ISBN :
978-1-4244-4731-2
Electronic_ISBN :
0749-6877
DOI :
10.1109/UGIM.2010.5508938
