• DocumentCode
    3008504
  • Title

    Transient gain spectroscopy of (GaIn) As quantum well structures

  • Author

    Lange, C. ; Chatterjee, S. ; Schlichenmaier, C. ; Thränhardt, A. ; Koch, S.W. ; Rühle, W.W. ; Khitrova, G. ; Gibbs, H.M.

  • Author_Institution
    Philipps-Univ. Marburg, Marburg
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Transient gain measurements are performed for (Galn)As quantum well structures. Gain up to 2000 cm-1 on a timescale of several hundred ps is observed. A microscopic model quantitatively provides theoretical support without introducing fit parameters.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; semiconductor quantum wells; GaInAs; quantum well structures; transient gain spectroscopy; Absorption; High speed optical techniques; Light scattering; Optical materials; Optical pumping; Optical scattering; Particle scattering; Probes; Pulse amplifiers; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452798
  • Filename
    4452798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3008504