Title :
Transient gain spectroscopy of (GaIn) As quantum well structures
Author :
Lange, C. ; Chatterjee, S. ; Schlichenmaier, C. ; Thränhardt, A. ; Koch, S.W. ; Rühle, W.W. ; Khitrova, G. ; Gibbs, H.M.
Author_Institution :
Philipps-Univ. Marburg, Marburg
Abstract :
Transient gain measurements are performed for (Galn)As quantum well structures. Gain up to 2000 cm-1 on a timescale of several hundred ps is observed. A microscopic model quantitatively provides theoretical support without introducing fit parameters.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; semiconductor quantum wells; GaInAs; quantum well structures; transient gain spectroscopy; Absorption; High speed optical techniques; Light scattering; Optical materials; Optical pumping; Optical scattering; Particle scattering; Probes; Pulse amplifiers; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452798
