DocumentCode
3008539
Title
1.55 μm GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays
Author
Mehta, M. ; Balakrishnan, G. ; Kutty, M.N. ; Patel, P. ; Dawson, L.R. ; Huffaker, D.L.
Author_Institution
Univ. of New Mexico, Albuquerque
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report a GaSb/AlGaSb multi-quantum well diode laser emitting at 1550 nm at 77 K. The laser is grown directly on a GaAs substrate using interfacial misfit (IMF) arrays rather than thick metamorphic buffer layers.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; optical pumping; quantum well lasers; GaAs; GaSb-AlGaSb; electrically injected laser; electrically-pumped semiconductor laser; interfacial misfit arrays; metamorphic buffer layers; multiquantum well diode laser; pulsed mode; temperature 77 K; wavelength 1.55 mum; Diode lasers; Gallium arsenide; Gas lasers; Optical arrays; Optical buffering; Quantum well devices; Semiconductor laser arrays; Space vector pulse width modulation; Substrates; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452800
Filename
4452800
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