• DocumentCode
    3008697
  • Title

    Advances in Mid-IR Materials

  • Author

    Schunemann, Peter G.

  • Author_Institution
    BAE Syst. Inc., Nashua
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Improved processing continues to reduce absorption losses in new and old bulk birefringent nonlinear optical crystals, while advances in all-epitaxial grown QPM GaAs promises to extend efficient, high-power frequency conversion to longer wavelengths.
  • Keywords
    III-V semiconductors; birefringence; gallium arsenide; nonlinear optics; optical frequency conversion; optical materials; GaAs; absorption loss reduction; all-epitaxial grown QPM; bulk birefringent nonlinear optical crystal; mid-IR material advances; Absorption; Birefringence; Crystalline materials; Crystals; Frequency conversion; Gallium arsenide; Nonlinear optics; Optical materials; Power generation; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452811
  • Filename
    4452811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3008697