Title :
Advances in Mid-IR Materials
Author :
Schunemann, Peter G.
Author_Institution :
BAE Syst. Inc., Nashua
Abstract :
Improved processing continues to reduce absorption losses in new and old bulk birefringent nonlinear optical crystals, while advances in all-epitaxial grown QPM GaAs promises to extend efficient, high-power frequency conversion to longer wavelengths.
Keywords :
III-V semiconductors; birefringence; gallium arsenide; nonlinear optics; optical frequency conversion; optical materials; GaAs; absorption loss reduction; all-epitaxial grown QPM; bulk birefringent nonlinear optical crystal; mid-IR material advances; Absorption; Birefringence; Crystalline materials; Crystals; Frequency conversion; Gallium arsenide; Nonlinear optics; Optical materials; Power generation; Thermal conductivity;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452811
