Title :
A comprehensive analytical approach for the evaluation of the P,R and C noise coefficients of InAlAs/InGaAs DG-HEMT
Author :
Bhattacharya, Monika ; Jogi, Jyotika ; Gupta, R.S. ; Gupta, Mridula
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India
Abstract :
The paper presents a comprehensive and accurate charge control based approach for the evaluation of the mean square gate and drain noise current and the P, R & C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT which play a vital role in the determination of the various other important noise performance parameters including the noise conductance and the minimum noise figure. The effect of gate length on the gate voltage behaviour of the P, R & C noise coefficients is studied. The analytical results obtained are compared and are found to correspond well with the ATLAS device simulation results.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ATLAS device simulation; C noise coefficient; InAlAs-InGaAs; P noise coefficient; R noise coefficient; charge control based approach; drain noise current; gate length; mean square gate; noise conductance; noise figure; symmetric tied-gate DG-HEMT; HEMT; InAlAs/InGaAs; correlation coefficient; double-gate; drain noise; gate noise;
Conference_Titel :
TENCON 2011 - 2011 IEEE Region 10 Conference
Conference_Location :
Bali
Print_ISBN :
978-1-4577-0256-3
DOI :
10.1109/TENCON.2011.6129288
