DocumentCode :
3008779
Title :
Gated Field Emitter Scaling
Author :
McGruer, N.E. ; Huang, Z.
Author_Institution :
Northeastern University
fYear :
1993
fDate :
12-15 Jul 1993
Firstpage :
135
Lastpage :
136
Keywords :
Atomic measurements; Current density; Diodes; Electrostatics; Geometry; Integrated circuit modeling; Packaging; Solid modeling; Sputtering; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1993., Proceedings of IEEE 6th International
Print_ISBN :
0-7803-0852-2
Type :
conf
DOI :
10.1109/IVMC.1993.700317
Filename :
700317
Link To Document :
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