• DocumentCode
    3008895
  • Title

    An antialiasing filter using complementary MOS transconductors biased in the triode region

  • Author

    Python, Dominique ; Enz, Christian

  • Author_Institution
    Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • Volume
    2
  • fYear
    1999
  • fDate
    36342
  • Firstpage
    184
  • Abstract
    A new low-voltage and low-power gm-C filter topology based on complementary MOS transconductors biased in the triode region is proposed. It requires a new bias circuit in order to match the transconductances of the PMOS and the NMOS transconductors. This new technique has been used to design a 2nd-order antialiasing filter for the transmit path of cordless telephone application. It performs with a high dynamic range of 73 dB and a low power consumption of 25 μW
  • Keywords
    MOS analogue integrated circuits; antialiasing; continuous time filters; cordless telephone systems; low-power electronics; 25 muW; antialiasing filter; bias circuit; complementary MOS transconductors; cordless telephone application; dynamic range; low-power gm-C filter topology; power consumption; transmit path; triode region; Circuits; Dynamic range; Electronic mail; Filters; Laboratories; MOS devices; Telephony; Threshold voltage; Transconductance; Transconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-5471-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1999.780650
  • Filename
    780650
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3008895