Title :
An antialiasing filter using complementary MOS transconductors biased in the triode region
Author :
Python, Dominique ; Enz, Christian
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
A new low-voltage and low-power gm-C filter topology based on complementary MOS transconductors biased in the triode region is proposed. It requires a new bias circuit in order to match the transconductances of the PMOS and the NMOS transconductors. This new technique has been used to design a 2nd-order antialiasing filter for the transmit path of cordless telephone application. It performs with a high dynamic range of 73 dB and a low power consumption of 25 μW
Keywords :
MOS analogue integrated circuits; antialiasing; continuous time filters; cordless telephone systems; low-power electronics; 25 muW; antialiasing filter; bias circuit; complementary MOS transconductors; cordless telephone application; dynamic range; low-power gm-C filter topology; power consumption; transmit path; triode region; Circuits; Dynamic range; Electronic mail; Filters; Laboratories; MOS devices; Telephony; Threshold voltage; Transconductance; Transconductors;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780650
