Study on Structures and Electrical Properties of 4H-SiC Floating-Junction SBDs

In this paper, with the purpose of improvement of power devices properties, the floating-junction technology was used in the 4H-SiC Schottky barrier diodes (SBD) and some parameters were optimized by software simulation. And compared with the conventional power SBDs, the electrical properties of floating-junction Schottky barrier diodes, especially the reverse blocking properties were enhanced. The breakdown voltage and specific on-resistance could reach 4.5KV and 6.15 mΩ.cm² respectively, while in company with the increasing of Baliga figure of material (BFOM). Then we also investigated the devices switching process and temperature characteristics under definite conditions.