Study on Structures and Electrical Properties of 4H-SiC Floating-Junction SBDs

Author

Nan, Yagong ; Xiang, Genxiang ; Li, Shouyi

Author_Institution

Dept. of Phys. & Electron., Hexi Univ., Zhangye, China

fYear

2010

fDate

25-27 June 2010

Firstpage

4317

Lastpage

4320

Abstract

In this paper, with the purpose of improvement of power devices properties, the floating-junction technology was used in the 4H-SiC Schottky barrier diodes (SBD) and some parameters were optimized by software simulation. And compared with the conventional power SBDs, the electrical properties of floating-junction Schottky barrier diodes, especially the reverse blocking properties were enhanced. The breakdown voltage and specific on-resistance could reach 4.5KV and 6.15 mΩ.cm² respectively, while in company with the increasing of Baliga figure of material (BFOM). Then we also investigated the devices switching process and temperature characteristics under definite conditions.

Keywords

Schottky barriers; Schottky diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; Baliga material figure; SiC; breakdown voltage; devices switching process; floating-junction Schottky barrier diodes; floating-junction technology; power devices properties; software simulation; voltage 4.5 kV; Electric fields; Junctions; Schottky barriers; Schottky diodes; Semiconductor process modeling; Silicon carbide; 4H-SiC; SBDs; floatin junction; structures and electrical properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Control Engineering (ICECE), 2010 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-6880-5

Type

conf

DOI

10.1109/iCECE.2010.1049

Filename

5631361