Title :
Structure-dependent reliability assessment of 1.3 μm InGaAsP/InP uncooled laser diodes by accelerated aging test
Author :
Hwang, Nam ; Joo, Gwan-Chong ; Lee, Sang-Hwan ; Park, Seong-Su ; Cho, Ho-Sung ; Song, Min-Kyu ; Pyun, Kwang-Eui
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
The purpose of this paper is to demonstrate reliability analysis of 1.3 μm InGaAsP/InP MQW-PHB laser diodes (LD) for high speed optical communication systems. We have accelerated aging tests and compared the assessment of 1.3 μm InGaAsP/InP strain-compensated MQW PBH-LD´s with different numbers of quantum well (NQW) and active width (WA). The experimental results show that ΔIth is related with WA rather than with N QW. For the same WA, we have observed that the variation of NQW has less effect on ΔIth which is primarily due to the limitation of the fabrication process in controlling the uniformity and homogeneity in the MQW layer
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; laser reliability; life testing; optical communication equipment; quantum well lasers; semiconductor device testing; 1.3 micrometre; III-V semiconductors; InGaAsP-InP; MQW-PHB laser diodes; accelerated aging test; active width; high speed optical communication systems; layer homogeneity; layer uniformity; quantum well; structure-dependent reliability assessment; uncooled laser diodes; uniformity; Accelerated aging; Diode lasers; Electronic equipment testing; Etching; Indium phosphide; Optical fiber communication; Optical interconnections; Quantum well devices; System testing; Threshold current;
Conference_Titel :
Electronic Components and Technology Conference, 1996. Proceedings., 46th
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3286-5
DOI :
10.1109/ECTC.1996.550904
