DocumentCode
3009462
Title
InGaAs photoconductive antennas for THz emission and detection with 1.56 μm excitation
Author
Takazato, A. ; Matsui, T. ; Kitagawa, J. ; Kadoya, Y.
Author_Institution
Hiroshima Univ., Higashihiroshima
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
The performance of photoconductive antennas made on low-temperature-grown InGaAs was significantly improved by the reduction of the In content. We demonstrate a completely 1.56 μm-based THz-emission and detection using the PC antennas.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; semiconductor growth; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave generation; InGaAs; THz detection; THz emission; low-temperature growth; photoconductive antennas; wavelength 1.56 μm; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical materials; Optical pulses; Photoconducting materials; Photoconductivity; Photonic band gap; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452855
Filename
4452855
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