Title :
Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells
Author :
Chern, Grace D. ; Shen, Hongen ; Wraback, Michael ; Koblmüller, Gregor ; Gallinat, Chad S. ; Speck, James S.
Author_Institution :
U.S. Army Res. Lab., Adelphi
Abstract :
We report the excitation wavelength dependence of terahertz emission from N-face InN/InGaN multiple quantum wells relative to that from bulk N-face InN when excited by femtosecond optical pulses tunable from 800 nm to 1700 nm.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; semiconductor quantum wells; submillimetre wave generation; wide band gap semiconductors; InN-InGaN; excitation wavelength; femtosecond optical pulses; multiple quantum wells; terahertz emission; wavelength 800 nm to 1700 nm; Gallium nitride; Indium; Laser excitation; Optical materials; Optical pulses; Piezoelectric polarization; Pulse amplifiers; Quantum well devices; Tunable circuits and devices; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452857
