Title :
A 15 GHz single stage GaAs dual-gate FET monolithic analog frequency divider with reduced input threshold power
Author :
Kanazawa, K. ; Kazumura, M. ; Kano, G.
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
Abstract :
An analog frequency divider is considered that operates on the basis of induced subharmonic oscillation and is composed of a mixer, a bandpass filter, amplifiers, and a feedback circuit. Although this frequency divider is inherently suitable for high-frequency operation, it possesses two substantial drawbacks: a complex circuit configuration is needed because of poor separation of the signals, and the input threshold power is undesirably high. The authors intend to mitigate these drawbacks by using a dual-gate FET mixer to improve the isolation of the signals, and by introducing a rejection filter at the output port to increase the conversion gain. The dual-gate FET contributes to simplifying the circuit configuration and the rejection filter results in reducing the input threshold power. The design, fabrication, and testing of the resulting 15-GHz single-stage monolithic GaAs FET analog frequency divider are described. Measured input/output characteristics at 14.8 GHz are given, and a high conversion gain of 0.0-2.5 dB is obtained for an input power of 2.0-9.5 dBm.<>
Keywords :
III-V semiconductors; field effect integrated circuits; frequency dividers; gallium arsenide; linear integrated circuits; microwave integrated circuits; 0 to 2.5 dB; 15 GHz; GaAs; circuit configuration; conversion gain; dual-gate FET mixer; dual-gate FET monolithic analog frequency divider; induced subharmonic oscillation; input power; input/output characteristics; reduced input threshold power; rejection filter; signal isolation; Band pass filters; Circuit testing; FETs; Fabrication; Feedback circuits; Frequency conversion; Gain measurement; Gallium arsenide; Mixers; Power measurement;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197286