Monolithic Ka-band VCOs

Author

Goldwasser, R. ; Donoghue, D. ; Dawe, G. ; Nash, S. ; Fingerman, C. ; Crossley, I. ; Mason, C. ; Rafaelli, L. ; Tayrani, R.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

fYear

1988

fDate

24-25 May 1988

Firstpage

55

Lastpage

58

Abstract

Two distinct monolithic GaAs voltage-controlled oscillators (VCOs) are reported: a Gunn diode-based circuit and a FET-based circuit. The Gunn VCO design incorporates 14 Gunn diodes, a varactor diode, power combiner, matching network and bias on a single integrated chip. The Gunn oscillator has delivered 125 mW at 32 GHz and 70 mW at 40 GHz with up to 500 MHz of electrical tuning bandwidth. The FET circuit uses a 0.25- mu m*200- mu m GaAs MESFET; it has produced up to 20-mW output power at 35 GHz and over 300 MHz of voltage tuning bandwidth.<>

Keywords

Gunn oscillators; III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; microwave oscillators; variable-frequency oscillators; 125 mW; 20 mW; 300 MHz; 32 GHz; 35 GHz; 40 GHz; 500 MHz; 70 mW; FET-based circuit; GaAs; Gunn diode-based circuit; Gunn oscillator; MESFET; electrical tuning bandwidth; monolithic Ka-band VCOs; output power; voltage tuning bandwidth; voltage-controlled oscillators; Bandwidth; Circuit optimization; Diodes; FET circuits; Gallium arsenide; Gunn devices; Power combiners; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MCS.1988.197288

Filename

197288