Title :
Monolithic Ka-band VCOs
Author :
Goldwasser, R. ; Donoghue, D. ; Dawe, G. ; Nash, S. ; Fingerman, C. ; Crossley, I. ; Mason, C. ; Rafaelli, L. ; Tayrani, R.
Author_Institution :
Alpha Ind. Inc., Woburn, MA, USA
Abstract :
Two distinct monolithic GaAs voltage-controlled oscillators (VCOs) are reported: a Gunn diode-based circuit and a FET-based circuit. The Gunn VCO design incorporates 14 Gunn diodes, a varactor diode, power combiner, matching network and bias on a single integrated chip. The Gunn oscillator has delivered 125 mW at 32 GHz and 70 mW at 40 GHz with up to 500 MHz of electrical tuning bandwidth. The FET circuit uses a 0.25- mu m*200- mu m GaAs MESFET; it has produced up to 20-mW output power at 35 GHz and over 300 MHz of voltage tuning bandwidth.<>
Keywords :
Gunn oscillators; III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; microwave oscillators; variable-frequency oscillators; 125 mW; 20 mW; 300 MHz; 32 GHz; 35 GHz; 40 GHz; 500 MHz; 70 mW; FET-based circuit; GaAs; Gunn diode-based circuit; Gunn oscillator; MESFET; electrical tuning bandwidth; monolithic Ka-band VCOs; output power; voltage tuning bandwidth; voltage-controlled oscillators; Bandwidth; Circuit optimization; Diodes; FET circuits; Gallium arsenide; Gunn devices; Power combiners; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197288
