Millimeter-wave monolithic GaAs IMPATT VCO

Author

Wang, N.L. ; Stacey, W. ; Brooks, R. ; Donegan, K. ; Hoke, W.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1988

fDate

24-25 May 1988

Firstpage

59

Lastpage

62

Abstract

A monolithic voltage-controlled oscillator (VCO) is described that was constructed using a GaAs double-drift Read IMPATT diode as the active element and a similar diode biased below breakdown as the varactor. The chip produced 120-mW peak power over an electronically controlled tuning range between 47 to 48 GHz. A computer analysis based on characterized circuit parameters was used to predict the performance of the chip. The key limiting factor in the power and tuning is the presence of large parasitic series resistance in the varactor. By utilizing a single-drift doping profile, improved performance can be expected.<>

Keywords

III-V semiconductors; IMPATT diodes; gallium arsenide; microwave integrated circuits; microwave oscillators; monolithic integrated circuits; variable-frequency oscillators; 120 mW; 47 to 48 GHz; GaAs; MM-wave monolithic IMPATT VCO; active element; computer analysis; double-drift Read IMPATT diode; electronically controlled tuning range; monolithic voltage-controlled oscillator; parasitic series resistance; peak power; single-drift doping profile; varactor; Breakdown voltage; Circuit analysis computing; Circuit optimization; Diodes; Doping profiles; Gallium arsenide; Performance analysis; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MCS.1988.197289

Filename

197289