Title :
Monolithic 60 GHz GaAs CW IMPATT oscillator
Author :
Bayraktaroglu, B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A monolithic microwave integrated circuit (MMIC) design was developed for GaAs IMPATT diodes to enable their operation under continuous-wave (CW) conditions at V-band frequencies. All impedance-matching circuits were fabricated on the top surface of the GaAs substrate. At 61.5 GHz, 100-mW CW output power was obtained with 13.5% conversion efficiency. In an alternative design, varactor diodes were integrated with the IMPATT circuits to produce the first monolithic VCOs operating under CW conditions. Over 3.5 GHz of tuning bandwidth was obtained at a center frequency of 70-GHz with a CW output power of 15 mW.<>
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; microwave integrated circuits; microwave oscillators; monolithic integrated circuits; variable-frequency oscillators; 100 mW; 13.5 percent; 15 mW; 3.5 GHz; 60 GHz; 70 GHz; CW output power; GaAs; GaAs substrate; MMIC CW IMPATT oscillator; V-band frequencies; center frequency; conversion efficiency; impedance-matching circuits; monolithic VCOs; tuning bandwidth; varactor diodes; Diodes; Frequency; Gallium arsenide; MMICs; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Power generation; Surface impedance; Varactors;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197290
