DocumentCode :
3009634
Title :
Broadband monolithic single and double ring active/passive mixers
Author :
Pavio, A.M. ; Halladay, R.H. ; Bingham, S.D. ; Sapashe, C.A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1988
fDate :
24-25 May 1988
Firstpage :
71
Lastpage :
74
Abstract :
Several double balanced multi-octave bandwidth mixers, comprised of active center-tapped baluns and diode rings are discussed that were fabricated using planar monolithic circuit technology. This novel balun topology uses common gate and common source circuit techniques, so that an ideal 180 degrees phase shift occurs for the signals present between the upper and lower halves of the circuit. The balun exhibits excellent balance through the design band on 2-18 GHz. The performance of a center-tapped balun, designed to operate throughout the 2 to 18 GHz frequency band, is described for both up-converter and down-converter mixer designs.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; mixers (circuits); waveguide components; 180 degrees phase shift; 2 to 18 GHz; GaAs processing; active center-tapped baluns; balun topology; common gate; common source circuit techniques; design band; diode rings; double balanced multi-octave bandwidth mixers; down-converter; planar monolithic circuit technology; up-converter; Circuits; FETs; Frequency; Gallium arsenide; Impedance matching; Instruments; Mixers; Schottky diodes; Semiconductor diodes; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/MCS.1988.197292
Filename :
197292
Link To Document :
بازگشت