Title :
Uniplanar MMICs and their applications
Author :
Muraguchi, Masahiro ; Hirota, Tetsuo ; Minakawa, Akira ; Ohwada, Kuniki ; Sugeta, Takayuki
Author_Institution :
Radio Commun. Syst. Lab., NTT, Kanagawa, Japan
Abstract :
Monolithic microwave integrated circuits (MMICs) for a 26-GHz full-MMIC receiver have been designed and fabricated using 0.3- mu m-gate ion-implanted GaAs IC processes. They consist of coplanar waveguides, slotlines, and lumped circuit elements (GaAs, FETs, capacitors, etc.), which use only one side of the GaAs substrate and have no via holes and no polished thin substrates. A description is given of the 26-GHz low-noise amplifier (LNA) and medium-power amplifier, the 6.5-GHz dual-output voltage-controlled oscillator (VCO), balanced FET frequency doublers (13 GHz/26 GHz), and the 26-GHz/1-GHz FET mixer used in the receiver.<>
Keywords :
III-V semiconductors; field effect integrated circuits; frequency multipliers; gallium arsenide; microwave amplifiers; microwave integrated circuits; mixers (circuits); power amplifiers; receivers; variable-frequency oscillators; waveguide components; 0.3 micron; 13 GHz; 26 GHz; 6.5 GHz; FET mixer; GaAs integrated circuit processes; GaAs substrate; balanced FET frequency doublers; coplanar waveguides; dual-output voltage-controlled oscillator; full-MMIC receiver; ion implantation; low-noise amplifier; lumped circuit elements; medium-power amplifier; slotlines; uniplanar MMICs; Capacitors; Coplanar waveguides; Gallium arsenide; Low-noise amplifiers; MMICs; Microwave FET integrated circuits; Microwave integrated circuits; Monolithic integrated circuits; Slotline; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197293
