A dual-varactor, analog phase shifter operating 6 to 18 GHz

Author

Krafcsik, D.M. ; Imhoff, Scott Allen ; Dawson, D.E. ; Conti, A.L.

Author_Institution

Westinghouse Electr. Corp., Baltimore, MD, USA

fYear

1988

fDate

24-25 May 1988

Firstpage

83

Lastpage

86

Abstract

A monolithic microwave integrated circuit (MMIC) analog reflection phase shifter is described that achieves 120 degrees of phase shift from 6 to 18 GHz using a dual-varactor reflection circuit. This circuit allows varactors with a 3:1 capacitance ratio to achieve the performance that normally requires 10:1 ratio diodes. The varactor diode used is a surface-oriented structure with a hyperabrupt doping profile selectively ion implanted to a depth of 0.70 mu m. Measured phase shift was typically 0 to 150+or-20 degrees with 2.7 dB typical insertion loss (4.0 dB worst case) for one coupler section over 6 to 18 GHz.<>

Keywords

linear integrated circuits; microwave integrated circuits; monolithic integrated circuits; phase shifters; varactors; 2.7 to 4 dB; 6 to 18 GHz; MMIC analogue reflection phase shifter; capacitance ratio; dual-varactor reflection circuit; hyperabrupt doping profile; insertion loss; phase shift; selective ion implantation; surface-oriented structure; Analog integrated circuits; Capacitance; Diodes; Doping profiles; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Phase shifters; Reflection; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MCS.1988.197295

Filename

197295