A high performance V-band monolithic FET transmit-receive switch

Author

Lan, G.L. ; Dunn, D.L. ; Chen, J.C. ; Pao, C.K. ; Wang, D.C.

Author_Institution

Hughes Aircraft Co., Torrance, CA, USA

fYear

1988

fDate

24-25 May 1988

Firstpage

99

Lastpage

101

Abstract

A monolithic V-band GaAs FET transmit-receive switch is described. The insertion loss for the switch-on path is less than 1.5 dB across a 2-GHz bandwidth (59 to 61 GHz) and is less than 3.2 dB across an 8-GHz bandwidth (56 to 64 GHz). The isolation during switch-off is greater than 25 dB across a 2-GHz bandwidth (59 to 61 GHz) and is greater than 23 dB across an 8-GHz bandwidth (56 to 64 GHz). The monolithic FET switch circuit demonstrated a switching speed of less than 1 ns and radio-frequency power handling capability in excess of 450 mW.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; switching circuits; 1 ns; 1.5 dB; 2 GHz; 3.2 dB; 450 mW; 56 to 64 GHz; 59 to 61 GHz; 8 GHz; GaAs; V-band monolithic FET transmit-receive switch; bandwidth; insertion loss; isolation during switch-off; radio-frequency power handling capability; switch-on path; switching speed; Bandwidth; Capacitance; Microwave FETs; Millimeter wave circuits; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MCS.1988.197299

Filename

197299