Title :
W-band high-gain amplifier using InP dual-gate HEMT technology
Author :
van der Zanden, K. ; Baeyens, Y. ; Van Hove, M. ; Schreurs, D. ; De Raedt, W. ; Van Rossum, M.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
High Electron Mobility Transistors (HEMTs) based on InP have proven to be the best performing three terminal devices at millimetre frequencies. This makes them an attractive alternative for MESFET technology to be incorporated in monolithic microwave integrated circuits (MMIC) with operating frequencies up to 100 GHz and beyond. In this paper we first present a coplanar technology for fabrication of InP HEMTs as well as passive components, involved in MMICs. A W-band high-gain amplifier based on this technology was designed and realised and results are presented, demonstrating the capabilities of InP HEMTs at frequencies in the range of 100 GHz
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; integrated circuit technology; millimetre wave amplifiers; 100 GHz; InP; InP dual-gate HEMT; MMIC; W-band high-gain amplifier; coplanar technology; fabrication; high electron mobility transistor; millimetre frequency; passive component; three terminal device; Frequency; HEMTs; Indium phosphide; Integrated circuit technology; MESFET integrated circuits; MMICs; MODFETs; Microwave devices; Microwave integrated circuits; Microwave technology;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600111
