GaAs monolithic circuit for FMCW radars

Author

Leblanc, R. ; Rudelle, M.-I. ; Pauker, V. ; Talbot, P. ; Collet, A. ; Bellaiche, J.

Author_Institution

LEP, Limeil-Brevannes, France

fYear

1988

fDate

24-25 May 1988

Firstpage

109

Lastpage

111

Abstract

A brief description is given of a monolithic GaAs chip that incorporates a varactor-tuned voltage-controlled oscillator (VCO), buffer amplifier and double balanced mixer with active phase splitters for an FM continuous-wave (CW) radar transmit-receiver. The circuit operates between 4 and 6 GHz with a 200 to 400 MHz tuning range with excellent VCO-tuning linearity, very high external quality factor, and low 1/f noise at the 5-kHz-to-10-MHz output port, achieved at reduced size.<>

Keywords

III-V semiconductors; field effect integrated circuits; frequency modulation; gallium arsenide; microwave integrated circuits; radar receivers; radar transmitters; 1/4 noise; 4 to 6 GHz; FM CW radar transmit receiver; FMCW radars; GaAs monolithic circuit; MESFET process; VCO-tuning linearity; active phase splitters; buffer amplifier; double balanced mixer; external quality factor; microwave circuits; tuning range; varactor-tuned voltage-controlled oscillator; Chirp modulation; Circuit optimization; FETs; Frequency modulation; Gallium arsenide; Linearity; Output feedback; Radar; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MCS.1988.197301

Filename

197301