Title :
A 3-watt X-band monolithic variable gain amplifier
Author :
Culbertson, R.B. ; Zimmermann, D.C.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The design and performance of a monolithic dual-gate GaAs FET 3-W X-band amplifier are discussed. The two-stage amplifier demonstrates 13-dB gain and over 20% power-added efficiency with low insertion phase variations over a 30% bandwidth. Both large-signal and small-signal gain can be varied by 20 dB while exhibiting less than +or-6 degrees insertion phase variation. The successful performance has established confidence in the utility of shunt in-line MIM tuning capacitors and large binary tree structures for on-chip power combining. In addition, this design has established confidence in the producibility of a large and fairly complex MMIC with substantial gate periphery, relatively large total MIM capacitance and many vias.<>
Keywords :
field effect integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; waveguide components; 13 dB; 20 percent; 3 W; 8 to 11.5 GHz; GaAs; MIM capacitance; X-band monolithic variable gain amplifier; binary tree structures; gate periphery; large-signal gain; low insertion phase variations; on-chip power combining; power-added efficiency; shunt in-line MIM tuning capacitors; small-signal gain; two-stage amplifier; Capacitance; FETs; Feeds; Gain control; Impedance matching; Instruments; MIM capacitors; MMICs; Power amplifiers; Radar applications;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197304
