Title :
A 5V-only 16M flash memory using a contactless array of source-side injection cells
Author :
Tsao, S.C. ; Frayer, J.E. ; Pang, C.S. ; Ma, Y. ; Kwon, K. ; Choi, Y. ; Kim, D. ; Kim, J. ; Park, J.
Author_Institution :
Bright Microelectron. Inc., Santa Clara, CA, USA
Abstract :
The source side injection technology coupled with a modified virtual ground contactless array architecture is effective in addressing high density FLASH requirements. We describe a single supply 16 Mbit chip developed in a 0.7 /spl mu/m triple-poly double metal process using a 3.36 /spl mu/m/sup 2/ cell. The design challenge is to implement all the necessary array interface circuitry while maintaining a high array-to-chip area efficiency. This implementation requires unique decoding circuitry on the bitlines and cell control gates.
Keywords :
CMOS memory circuits; EPROM; memory architecture; 0.7 micron; 16 Mbit; 5 V; area efficiency; bitline decoding; chip architecture; contactless array; control gates; flash memory; interface circuitry; source-side injection cells; triple-poly double metal process; virtual ground; CMOS technology; Coupling circuits; Decoding; Delay effects; Electrons; Flash memory; Low voltage; Microelectronics; Repeaters; Voltage control;
Conference_Titel :
VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7800-2599-0
DOI :
10.1109/VLSIC.1995.520693
