Title :
Wideband variable gain amplifiers in GaAs MMIC
Author :
Snow, K.H. ; Komiak, J.J. ; Bates, D.A.
Author_Institution :
General Electric Co., Syracuse, NY, USA
Abstract :
The design and performance of C, X, and K/sub u/-band GaAs MMIC variable-gain and variable-power amplifier circuits using an improved segmented dual-gate MESFET device with binary scaled gate width ratios are reported. The demonstrated 35-dB control range, flat octave-band gain response, and less than 10-degrees incidental phase variation as a function of gain/attenuation state over a 20-dB control range are significantly superior to conventional analog-controlled devices.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; power amplifiers; wideband amplifiers; 1.5 dB; 4 to 11 GHz; 5.5 dB; 6 to 12 dB; 6 to 18 GHz; C-band; GaAs; Ku-band; MMIC wideband variable gain amplifiers; X-band; binary scaled gate width ratios; control range; flat octave-band gain response; incidental phase variation; segmented dual-gate MESFET; Broadband amplifiers; Circuit synthesis; Communication system control; Electric variables control; Gain; Gallium arsenide; MESFET circuits; MMICs; Power amplifiers; Solid modeling;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197307
