DocumentCode
3009945
Title
A monolithic Ka-band HEMT low-noise amplifier
Author
Yuen, C. ; Nishimoto, C. ; Glenn, M. ; Pao, Y.C. ; Bandy, S. ; Zdasiuk, G.
Author_Institution
Varian Res. Center, Palo Alto, CA, USA
fYear
1988
fDate
24-25 May 1988
Firstpage
139
Lastpage
142
Abstract
A monolithic, single-stage high-electron-mobility transistor (HEMT) low-noise amplifier was developed for the 20-40-GHz band. This amplifier includes a single 0.25- mu m-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of approximately 6 dB from 20 to 38 GHz, and a noise figure of approximately 5 dB from 26.5 to 38 GHz were measured. The chip size is 2.2 mm*1.1 mm.<>
Keywords
field effect integrated circuits; high electron mobility transistors; microwave amplifiers; microwave integrated circuits; 0.25 micron; 20 to 40 GHz; 5 dB; 6 dB; biasing circuits; gate length; matching circuit; monolithic Ka-band HEMT low-noise amplifier; Circuit noise; Distributed parameter circuits; Equivalent circuits; Gain measurement; Gallium arsenide; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Performance gain;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MCS.1988.197308
Filename
197308
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