Title :
A monolithic Ka-band HEMT low-noise amplifier
Author :
Yuen, C. ; Nishimoto, C. ; Glenn, M. ; Pao, Y.C. ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A monolithic, single-stage high-electron-mobility transistor (HEMT) low-noise amplifier was developed for the 20-40-GHz band. This amplifier includes a single 0.25- mu m-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of approximately 6 dB from 20 to 38 GHz, and a noise figure of approximately 5 dB from 26.5 to 38 GHz were measured. The chip size is 2.2 mm*1.1 mm.<>
Keywords :
field effect integrated circuits; high electron mobility transistors; microwave amplifiers; microwave integrated circuits; 0.25 micron; 20 to 40 GHz; 5 dB; 6 dB; biasing circuits; gate length; matching circuit; monolithic Ka-band HEMT low-noise amplifier; Circuit noise; Distributed parameter circuits; Equivalent circuits; Gain measurement; Gallium arsenide; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Performance gain;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197308
