Title :
Enhanced Aspect Ratio of Focused Ion Beam Nanopatterning Technique in Semiconductors
Author :
Hayat, Alex ; Lahav, Alex ; Orenstein, Meir
Author_Institution :
Technion - Israel Inst. of Technol., Haifa
Abstract :
We demonstrate a more than 10 aspect-ratio FIB semiconductor nanopatterning technique. The undesired semiconductor material decomposition by the beam-tail ions is prevented by a protective Ti layer acting as a mask for the semiconductor.
Keywords :
masks; nanopatterning; protective coatings; semiconductor materials; sputter etching; titanium; FIB semiconductor; Ti; beam-tail ions; enhanced aspect ratio; focused ion beam; mask; nanopatterning; protective layer; semiconductor material decomposition; Etching; Ion beams; Microstructure; Milling; Molecular beam epitaxial growth; Nanopatterning; Optical devices; Particle beams; Protection; Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452886
