Title :
Model-adaptable MOSFET parameter extraction method using a common intermediate model
Author :
Kondo, Masaki ; Onodera, Hidetoshi ; Tamaru, Keikichi
Author_Institution :
Dept. of Electron., Kyoto Univ., Japan
Abstract :
In this paper, a model-adaptable MOSFET parameter extraction method is discussed. A salient feature of the method is that model dependency of initial value estimation, which is crucial for successful extraction with a numerical optimization technique, is eliminated as much as possible by introducing an intermediate model. We have verified the effectiveness of the method by adopting it to major SPICE models
Keywords :
MOSFET; SPICE; circuit analysis computing; optimisation; semiconductor device models; MOSFET parameter extraction method; SPICE models; common intermediate model; initial value estimation; model-adaptable parameter extraction; numerical optimization technique; Circuit simulation; Costs; Curve fitting; Logic; MOSFET circuits; Optimization methods; Parameter estimation; Parameter extraction; SPICE; Voltage;
Conference_Titel :
ASIC Conference and Exhibit, 1994. Proceedings., Seventh Annual IEEE International
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-2020-4
DOI :
10.1109/ASIC.1994.404548
