Title :
Si3N4 based non-volatile memory structures with embedded Si and Ge nanocrystals
Author :
Horváth, Zsolt J. ; Basa, Péter ; Jászi, Tamás ; Pap, Andrea E. ; Molnár, György ; Kovalev, Anatoly ; Wainstein, Dmitry ; Turmezei, Péter
Author_Institution :
Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest, Hungary
Abstract :
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of Si or Ge nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of plusmn15 V, 10 m.s.
Keywords :
MIS structures; chemical vapour deposition; elemental semiconductors; germanium; random-access storage; semiconductor storage; silicon; silicon compounds; Ge; MNOS structures; Si; Si3N4; charging pulses; embedded sheet; low pressure chemical vapour deposition; nanocrystals; nitride based memory structures; nonvolatile memory structures; retention time; time 41 year; tunnel layers; Chemical technology; FETs; Materials science and technology; Nanocrystals; Nonvolatile memory; Pressure control; Pulse measurements; Space vector pulse width modulation; Threshold voltage; Tunneling;
Conference_Titel :
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Conference_Location :
Brno
Print_ISBN :
978-1-4244-4260-7
DOI :
10.1109/ISSE.2009.5206962
