Title :
Floating-gate devices: they are not just for digital memories any more
Author :
Hasler, Paul ; Minch, Bradley A. ; Diorio, Chris
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Since the first reported floating-gate structure in 1967, floating-gate transistors have been used widely to store digital information for long periods in structures such as EPROMs and EEPROMs. Recently floating-gate devices have found applications as analog memories, analog and digital circuit elements, and adaptive processing elements. Floating-gate devices have found commerical applications, e.g. ISD, for long-term non-volatile information storage devices for analog applications. The focus of floating-gate devices has been towards fabrication in standard CMOS processes, as opposed to the specialized processes for fabricating digital non-volatile memories. Floating-gate circuits can be designed at any or all of three levels: analog memory elements, capacitive-based circuit elements, and adaptive circuit elements
Keywords :
CMOS analogue integrated circuits; analogue processing circuits; analogue storage; adaptive processing elements; analog memories; capacitive-based circuit elements; floating-gate devices; standard CMOS processes; Analog memory; CMOS process; Digital circuits; EPROM; Fabrication; Flash memory; Integrated circuit technology; Neuromorphics; Nonvolatile memory; Read only memory;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780740