• DocumentCode
    3010594
  • Title

    Floating-gate devices: they are not just for digital memories any more

  • Author

    Hasler, Paul ; Minch, Bradley A. ; Diorio, Chris

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    2
  • fYear
    1999
  • fDate
    36342
  • Firstpage
    388
  • Abstract
    Since the first reported floating-gate structure in 1967, floating-gate transistors have been used widely to store digital information for long periods in structures such as EPROMs and EEPROMs. Recently floating-gate devices have found applications as analog memories, analog and digital circuit elements, and adaptive processing elements. Floating-gate devices have found commerical applications, e.g. ISD, for long-term non-volatile information storage devices for analog applications. The focus of floating-gate devices has been towards fabrication in standard CMOS processes, as opposed to the specialized processes for fabricating digital non-volatile memories. Floating-gate circuits can be designed at any or all of three levels: analog memory elements, capacitive-based circuit elements, and adaptive circuit elements
  • Keywords
    CMOS analogue integrated circuits; analogue processing circuits; analogue storage; adaptive processing elements; analog memories; capacitive-based circuit elements; floating-gate devices; standard CMOS processes; Analog memory; CMOS process; Digital circuits; EPROM; Fabrication; Flash memory; Integrated circuit technology; Neuromorphics; Nonvolatile memory; Read only memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-5471-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1999.780740
  • Filename
    780740