Title :
The relaxation processes analysis in the submicron heterojunction transistor with quantum dots
Author :
Timofeyev, Vladimir ; Faleeva, Elena
Author_Institution :
Dept. of Phys. & Biomed. Electron., Nat. Tech. Univ. of Ukraine "Kiev Polytech. Inst.", Kiev, Ukraine
Abstract :
In the paper an algorithm for heterostructure transistor with quantum dots modeling is presented. The described model is based on the system of relaxation equations which takes into account relaxation processes in multivalley semiconductors, and to describe submicron structures sufficiently.
Keywords :
high electron mobility transistors; quantum dots; quantum dots; relaxation processes; submicron heterojunction transistor; submicron structures; Biomedical electronics; Charge carriers; Electrons; Energy conservation; Heterojunctions; Poisson equations; Quantum dot lasers; Quantum dots; Temperature distribution; Transistors;
Conference_Titel :
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Conference_Location :
Brno
Print_ISBN :
978-1-4244-4260-7
DOI :
10.1109/ISSE.2009.5206982
