DocumentCode :
3011272
Title :
InGaAs-AlAsSb quantum cascade lasers: towards 3 μm emission
Author :
Revin, D.G. ; Cockburn, J.W. ; Wilson, L.R. ; Steer, M.J. ; Airey, R.J. ; Hopkinson, M. ; Krysa, A.B.
Author_Institution :
Univ. of Sheffield, Sheffield
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We report the first realization of lattice matched In0.53Ga0.47As/AlAs0.56Sb0.44/InP quantum cascade lasers emitting close to 3 μm and first demonstration of strain balanced InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths near 4 μm.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium compounds; indium compounds; laser beams; quantum cascade lasers; In0.53Ga0.47As-AlAs0.56Sb0.44-InP; emission characteristics; lattice matched quantum cascade lasers; strain balanced quantum cascade lasers; Capacitive sensors; Indium gallium arsenide; Indium phosphide; Lattices; Optical scattering; Particle scattering; Quantum cascade lasers; Quantum well lasers; Stimulated emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4452956
Filename :
4452956
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3011272
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