Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

This work presents results of experiments on electrical pumping of laser diode by driver based on avalanche S-diode. Nine-fold increase of pulse power of semiconductor commercial InGaN/GaN laser diode at pulse duration 15-20 ns and frequency 90 kHz was achieved. Proposed laser module was used in set of tools for light-emitting diode structures characterization as a pumping source for photoluminescence measurements. Finally comparative test measurements of quantum efficiency of conventional light-emitting structures were conducted using electroluminescence and photoluminescence regimes. Measurements have shown promising results for developed laser module for light-emitting diode structures characterization.