DocumentCode
3011486
Title
Characterization of a Trench-Gated IGBT using the split C-V Method
Author
Boyer, L. ; Notingher, P., Jr. ; Agnel, S.
Author_Institution
Inst. d´´Electron. du Sud, Univ. of Montpellier 2, Montpellier
fYear
2009
fDate
15-19 Feb. 2009
Firstpage
2055
Lastpage
2060
Abstract
The present paper proposes an application of the split C-V method to trench gated IGBTs. A model of the gate to emitter capacitance along with an illustration of the monitoring of injected charges in the trench oxide of a trench gated IGBT during an accelerated ageing campaign are presented.
Keywords
ageing; charge injection; insulated gate bipolar transistors; power semiconductor devices; accelerated ageing campaign; charge injection; gate-to-emitter capacitance; insulated gate bipolar transistor; power semiconductor device; split C-V method; trench-gated IGBT; Capacitance-voltage characteristics; Circuits; Digital control; Inductance; Insulated gate bipolar transistors; Isolators; Power supplies; Propagation delay; Traction power supplies; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2009. APEC 2009. Twenty-Fourth Annual IEEE
Conference_Location
Washington, DC
ISSN
1048-2334
Print_ISBN
978-1-4244-2811-3
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2009.4802957
Filename
4802957
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