Active Gate Control for High Power IGBTs in Wind Power Generation System

Author

Wang, Bin ; Wang, Yue ; Li, Ming ; Wang, Zhaoan ; Xiao, Guochun

Author_Institution

Sch. of Electr. Eng., Xi´´an Jiaotong Univ., Xi´´an

fYear

2009

fDate

15-19 Feb. 2009

Firstpage

2068

Lastpage

2071

Abstract

In this paper, an active gate control method for high power IGBTs in wind power generation system is investigated. With this method, the turn off voltage of the high power IGBTs using Trench-/Field-Stop technology can be clamped at proper level. The implementation of the control strategies is also introduced, which has been used in the practical wind power generation system. It is based on the control of the gradient and the magnitude of the IGBTs turn-off voltage. Simulation and experimental results show that the turn off voltage and its gradient of the high power IGBTs can be controlled properly.

Keywords

insulated gate bipolar transistors; power bipolar transistors; wind power plants; Trench-/Field-Stop technology; active gate control; control strategy implementation; high power IGBT; insulated gate bipolar transistor turn-off voltage; wind power generation system; Breakdown voltage; Capacitors; Control systems; Insulated gate bipolar transistors; Modems; Power generation; Pulse width modulation; Resistors; Voltage control; Wind power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2009. APEC 2009. Twenty-Fourth Annual IEEE

Conference_Location

Washington, DC

ISSN

1048-2334

Print_ISBN

978-1-4244-2811-3

Electronic_ISBN

1048-2334

Type

conf

DOI

10.1109/APEC.2009.4802959

Filename

4802959