DocumentCode
3011813
Title
Polysilicon-on-Insulator Photonic Devices
Author
Preston, Kyle ; Lipson, Michal
Author_Institution
Cornell Univ., Ithaca
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We demonstrate ring resonators with Q = 4,000 using poly crystalline silicon annealed at a low temperature of 600degC, which is compatible with standard CMOS processes.
Keywords
CMOS integrated circuits; integrated optics; laser beam annealing; optical resonators; CMOS process; annealing; photonic devices; polysilicon on insulator; ring resonators; temperature 600 degC; Annealing; Optical devices; Optical losses; Optical resonators; Optical ring resonators; Optical scattering; Optical waveguides; Photonic crystals; Plasma temperature; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452982
Filename
4452982
Link To Document