Title :
17 GHz-bandwidth 17 dB-gain 0.3 /spl mu/m-HEMT low-power limiting amplifier
Author :
Zhi-Gong Wang ; Berroth, M. ; Hurm, V. ; Lang, M. ; Notwotny, U. ; Hofmann, P. ; Hulsmann, A. ; Kohler, K. ; Raynor, B. ; Schneider, J.
Author_Institution :
Fraunhofer-Inst. for Appl. & Solid State Phys., Freiburg, Germany
Abstract :
The design of a limiting amplifier with a high speed, a high gain, and a wide dynamic range is a basic task for the realization of high-speed data transmission systems. A limiting amplifier fabricated using Si-bipolar technology can be operated at 15 Gb/s with a power consumption of 720 mW. An AlGaAs/GaAs HBT limiting amplifier can be operated up to 15 GHz with a power consumption of 1.5 W. The HEMT limiting amplifier presented in this paper shows a higher bandwidth but needs a much lower DC power.
Keywords :
HEMT integrated circuits; amplifiers; limiters; 0.3 micron; 17 GHz; 17 dB; DC power consumption; HEMT low-power limiting amplifier; dynamic range; high-speed data transmission systems; Circuits; Clocks; Data communication; Energy consumption; HEMTs; MODFETs; Optical amplifiers; Optical receivers; Resistors; Semiconductor optical amplifiers;
Conference_Titel :
VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7800-2599-0
DOI :
10.1109/VLSIC.1995.520703
