Title :
Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates
Author :
Huffaker, D.L. ; Balakrishnan, G. ; Mehta, M. ; Kutty, M.N. ; Rotella, P. ; Krishna, S. ; Dawson, L.R.
Author_Institution :
Univ. of New Mexico, Albuquerque
Abstract :
We report on recent monolithically integrated III-V on Si device developments including a room-temperature, superluminescent light emitting diode. The integration scheme is enabled by spontaneously-formed, interfacial misfit arrays (IMF).
Keywords :
III-V semiconductors; monolithic integrated circuits; superluminescent diodes; JkSb; Si; integration scheme; interfacial misfit arrays; monolithically integrated III-V superluminescent light emitting diode; superluminal spectrum; Capacitive sensors; Etching; Gallium arsenide; III-V semiconductor materials; Lattices; Light emitting diodes; Superluminescent diodes; Temperature; Thermal expansion; Wafer bonding;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452988
