DocumentCode
3011905
Title
Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates
Author
Huffaker, D.L. ; Balakrishnan, G. ; Mehta, M. ; Kutty, M.N. ; Rotella, P. ; Krishna, S. ; Dawson, L.R.
Author_Institution
Univ. of New Mexico, Albuquerque
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report on recent monolithically integrated III-V on Si device developments including a room-temperature, superluminescent light emitting diode. The integration scheme is enabled by spontaneously-formed, interfacial misfit arrays (IMF).
Keywords
III-V semiconductors; monolithic integrated circuits; superluminescent diodes; JkSb; Si; integration scheme; interfacial misfit arrays; monolithically integrated III-V superluminescent light emitting diode; superluminal spectrum; Capacitive sensors; Etching; Gallium arsenide; III-V semiconductor materials; Lattices; Light emitting diodes; Superluminescent diodes; Temperature; Thermal expansion; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452988
Filename
4452988
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