• DocumentCode
    3011927
  • Title

    Warpage of InP wafers

  • Author

    Fukui, T. ; Kurita, H. ; Makino, N.

  • Author_Institution
    Isohara Plant, Japan Energy Corp., Ibaraki, Japan
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    272
  • Lastpage
    275
  • Abstract
    InP wafer warpage induced during its processing has been investigated. Magnitude and shape of wafer warpage caused by surface damage, which is presumed to give tensile stress to wafer, was influenced by its dopant. After MOCVD growth some wafer warpage changed but only a little and smooth surfaces of epi-layer were achieved
  • Keywords
    CVD coatings; III-V semiconductors; indium compounds; internal stresses; semiconductor epitaxial layers; semiconductor technology; InP; InP wafer warpage; MOCVD growth; dopant; epilayer; semiconductor processing; surface damage; tensile stress; Crystals; Etching; Indium phosphide; Iron; Laboratories; MOCVD; Shape; Stress; Tin; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600121
  • Filename
    600121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3011927