Title :
Low Threshold VCSELs Recess-Integrated on Si-CMOS ICs
Author :
Perkins, James M. ; Fonstad, Clifton G.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge
Abstract :
VCSELs have been integrated as individual pills within the dielectric stack of commercially produced Si ICs. 1 mA threshold currents and thermal characteristics similar to those of native substrate devices are seen.
Keywords :
CMOS integrated circuits; optical interconnections; surface emitting lasers; Si-CMOS ICs; dielectric stack; low threshold VCSELs; threshold currents; Apertures; Bonding; Circuits; Dielectric devices; Dielectric substrates; Etching; Gallium arsenide; Gold; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452991
