• DocumentCode
    3011947
  • Title

    Low Threshold VCSELs Recess-Integrated on Si-CMOS ICs

  • Author

    Perkins, James M. ; Fonstad, Clifton G.

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    VCSELs have been integrated as individual pills within the dielectric stack of commercially produced Si ICs. 1 mA threshold currents and thermal characteristics similar to those of native substrate devices are seen.
  • Keywords
    CMOS integrated circuits; optical interconnections; surface emitting lasers; Si-CMOS ICs; dielectric stack; low threshold VCSELs; threshold currents; Apertures; Bonding; Circuits; Dielectric devices; Dielectric substrates; Etching; Gallium arsenide; Gold; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452991
  • Filename
    4452991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3011947