• DocumentCode
    3012190
  • Title

    Enhanced light-extraction from InGaN quantum wells using refractive-index-matched TiO2

  • Author

    Fischer, Arthur J. ; Mont, Frank ; Kim, Jong Kyu ; Schubert, E.Fred ; Koleske, Daniel D. ; Crawford, Mary H.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Enhancement of the overall luminescence efficiency in InGaN quantum wells by increasing the light-extraction efficiency is demonstrated by lateral patterning of refractive-index- matched TiO2 films on InGaN quantum well samples.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical materials; photoluminescence; refractive index; semiconductor quantum wells; titanium compounds; InGaN; TiO2; enhanced light-extraction; lateral patterning; light-emitting diodes; luminescence efficiency; quantum wells; refractive-index-matched films; Atomic force microscopy; Gallium nitride; Lattices; Light emitting diodes; Luminescence; Optical films; Optical refraction; Photoluminescence; Quantum computing; Refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453004
  • Filename
    4453004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3012190