DocumentCode :
3012190
Title :
Enhanced light-extraction from InGaN quantum wells using refractive-index-matched TiO2
Author :
Fischer, Arthur J. ; Mont, Frank ; Kim, Jong Kyu ; Schubert, E.Fred ; Koleske, Daniel D. ; Crawford, Mary H.
Author_Institution :
Sandia Nat. Labs., Albuquerque
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Enhancement of the overall luminescence efficiency in InGaN quantum wells by increasing the light-extraction efficiency is demonstrated by lateral patterning of refractive-index- matched TiO2 films on InGaN quantum well samples.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical materials; photoluminescence; refractive index; semiconductor quantum wells; titanium compounds; InGaN; TiO2; enhanced light-extraction; lateral patterning; light-emitting diodes; luminescence efficiency; quantum wells; refractive-index-matched films; Atomic force microscopy; Gallium nitride; Lattices; Light emitting diodes; Luminescence; Optical films; Optical refraction; Photoluminescence; Quantum computing; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453004
Filename :
4453004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3012190
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