• DocumentCode
    3012204
  • Title

    Enhancement of Light Extraction Efficiency of InGaN Quantum Wells LEDs Using SiO2 Microspheres

  • Author

    Ee, Yik-Khoon ; Kumnorkaew, Pisist ; Arif, Ronald A. ; Gilchrist, James F. ; Tansu, Nelson

  • Author_Institution
    Lehigh Univ., Bethlehem
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Novel approach to improve the light extraction efficiency of InGaN quantum wells light emitting diodes (LEDs) using SiO2 microspheres was presented, leading to ~232% increase of the LEDs output power.
  • Keywords
    III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; silicon compounds; InGaN; LED power; SiO2; light extraction efficiency enhancement; microspheres; quantum wells LED; quantum wells light emitting diodes; Colloidal crystals; Crystallization; Gallium nitride; Light emitting diodes; Lithography; Quantum computing; Rough surfaces; Stimulated emission; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453005
  • Filename
    4453005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3012204