DocumentCode :
3012204
Title :
Enhancement of Light Extraction Efficiency of InGaN Quantum Wells LEDs Using SiO2 Microspheres
Author :
Ee, Yik-Khoon ; Kumnorkaew, Pisist ; Arif, Ronald A. ; Gilchrist, James F. ; Tansu, Nelson
Author_Institution :
Lehigh Univ., Bethlehem
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Novel approach to improve the light extraction efficiency of InGaN quantum wells light emitting diodes (LEDs) using SiO2 microspheres was presented, leading to ~232% increase of the LEDs output power.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; silicon compounds; InGaN; LED power; SiO2; light extraction efficiency enhancement; microspheres; quantum wells LED; quantum wells light emitting diodes; Colloidal crystals; Crystallization; Gallium nitride; Light emitting diodes; Lithography; Quantum computing; Rough surfaces; Stimulated emission; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453005
Filename :
4453005
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3012204
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