Title :
High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces
Author :
Lee, Y.J. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
High light-extraction (external quantum efficiency ~40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; optical fabrication; semiconductor devices; wide band gap semiconductors; GaN; double diffuse surface; light-emitting diode; light-extraction GaN-based vertical LED; scattering efficiency; wavelength 465 nm; Gallium nitride; Gold; Light emitting diodes; Light scattering; Optical scattering; Optical surface waves; Particle scattering; Power generation; Rough surfaces; Surface roughness;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453006
