DocumentCode
3012231
Title
High Light-Extraction GaN-based Vertical LEDs With Double Diffuse Surfaces
Author
Lee, Y.J. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution
Nat. Chiao Tung Univ., Hsinchu
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
High light-extraction (external quantum efficiency ~40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; optical fabrication; semiconductor devices; wide band gap semiconductors; GaN; double diffuse surface; light-emitting diode; light-extraction GaN-based vertical LED; scattering efficiency; wavelength 465 nm; Gallium nitride; Gold; Light emitting diodes; Light scattering; Optical scattering; Optical surface waves; Particle scattering; Power generation; Rough surfaces; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453006
Filename
4453006
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