DocumentCode :
3012270
Title :
High speed data amplification using hybrid silicon evanescent amplifier
Author :
Kuo, Ying-hao ; Park, Hyundai ; Fang, Alexander W. ; Bowers, John E. ; Jones, Roy ; Paniccia, Mario ; Cohen, Oded
Author_Institution :
Univ. of California, Santa Barbara
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Data amplification using hybrid silicon evanescent amplifier is demonstrated at bit rates up to 40 Gbps. The amplifier exhibits 13 dB on-chip gain with low power penalty of 0.5 dB. Pattern effects due to carrier lifetime are investigated.
Keywords :
carrier lifetime; elemental semiconductors; high-speed optical techniques; optical communication equipment; optical fibre communication; semiconductor optical amplifiers; silicon; bit rate 40 Gbit/s; bit rates; carrier lifetime; high speed data amplification; hybrid silicon evanescent amplifier; on-chip gain; pattern effects; power penalty; semiconductor optical amplifiers; Bit error rate; Charge carrier lifetime; Current density; Gain; Optical amplifiers; Optical feedback; Optical fiber devices; Optical waveguides; Semiconductor optical amplifiers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453009
Filename :
4453009
Link To Document :
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