DocumentCode
3012357
Title
Application of Saber´s simulation model IGBT1 in solid-state switch design
Author
Jun, Mei ; Jianyong, Zheng ; Mingqiang, Hu ; Ying, Rao
Author_Institution
Dept. of Electr. Eng., Southeast Univ., Nanjing
Volume
3
fYear
2005
fDate
29-29 Sept. 2005
Firstpage
2013
Abstract
The Saber is the most powerful simulator in the power electronics field of the world. This paper introduces the characteristics of the IGBT1 model and choice of the parameters under Saber, and explains the characteristic of the model to a kind of DC solid-state switch. Through calculating and analyzing the theory of IGBT working course, and simulating the IGBT1 model in the stable and transient process, this paper partially verifies the accuracy of IGBT1 model in stable and transient process and offers reliable assurance for the power electronics simulation
Keywords
power semiconductor switches; transient analysis; IGBT1; Saber simulation model; power electronics field; power electronics simulation; solid-state switch design; transient process; Analytical models; Insulated gate bipolar transistors; Mathematical model; Power electronics; Power system simulation; Power system transients; Solid modeling; Solid state circuits; Switches; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Machines and Systems, 2005. ICEMS 2005. Proceedings of the Eighth International Conference on
Conference_Location
Nanjing
Print_ISBN
7-5062-7407-8
Type
conf
DOI
10.1109/ICEMS.2005.202914
Filename
1575111
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