Title :
Application of Saber´s simulation model IGBT1 in solid-state switch design
Author :
Jun, Mei ; Jianyong, Zheng ; Mingqiang, Hu ; Ying, Rao
Author_Institution :
Dept. of Electr. Eng., Southeast Univ., Nanjing
Abstract :
The Saber is the most powerful simulator in the power electronics field of the world. This paper introduces the characteristics of the IGBT1 model and choice of the parameters under Saber, and explains the characteristic of the model to a kind of DC solid-state switch. Through calculating and analyzing the theory of IGBT working course, and simulating the IGBT1 model in the stable and transient process, this paper partially verifies the accuracy of IGBT1 model in stable and transient process and offers reliable assurance for the power electronics simulation
Keywords :
power semiconductor switches; transient analysis; IGBT1; Saber simulation model; power electronics field; power electronics simulation; solid-state switch design; transient process; Analytical models; Insulated gate bipolar transistors; Mathematical model; Power electronics; Power system simulation; Power system transients; Solid modeling; Solid state circuits; Switches; Transient analysis;
Conference_Titel :
Electrical Machines and Systems, 2005. ICEMS 2005. Proceedings of the Eighth International Conference on
Conference_Location :
Nanjing
Print_ISBN :
7-5062-7407-8
DOI :
10.1109/ICEMS.2005.202914
