DocumentCode :
3012735
Title :
Gallium Nitride LEDs Incorporating Organic Semiconductor Heterojunctions
Author :
Kim, Hyunjin ; Dang, Cuong ; Song, Yoon-Kyu ; Zhang, Qiang ; Davitt, Kristina ; Nurmikko, Arto V. ; Kwon, S.-Y. ; Kim, K.-K. ; Han, Jung
Author_Institution :
Brown Univ., Providence
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We report on the incorporation of thin organic layers as part of GaN/InGaN blue light emitting diodes. The integration of two such contrasting classes of materials as electronic part of a single device structure may offer new opportunities in the design of flexible optoelectronic devices.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; organic semiconductors; semiconductor heterojunctions; wide band gap semiconductors; GaN-InGaN; LED; blue light emitting diode; flexible optoelectronic devices; organic semiconductor heterojunction; single device structure; thin organic layers; Crystalline materials; Gallium nitride; Gold; Heterojunctions; III-V semiconductor materials; Light emitting diodes; Optical films; Optical materials; Organic materials; Organic semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453034
Filename :
4453034
Link To Document :
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