DocumentCode :
3012921
Title :
Influence of dopant species on electron mobility in InP
Author :
Köpf, Ch ; Kaiblinger-Grujin, G. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Vienna, Austria
fYear :
1997
fDate :
11-15 May 1997
Firstpage :
280
Lastpage :
283
Abstract :
We present a theoretical reassessment of electron mobility in doped InP with respect to different doping species. Using Thomas-Fermi theory in the energy functional formulation we describe the charge density of the individual impurity ion. Analytical expressions for the scattering rate are calculated based on a variational expression of Schwinger. Employing these results in a Monte Carlo calculation we find no significant dependence of mobility on doping species up to 1018 cm-3. For higher concentrations an increasing difference is observed which reaches 25% at 1019 cm-3 for Si and Te doping
Keywords :
III-V semiconductors; Monte Carlo methods; Thomas-Fermi model; electron mobility; impurity scattering; indium compounds; semiconductor doping; variational techniques; InP; InP:Si; InP:Te; Monte Carlo simulation; Schwinger variational theory; Thomas-Fermi theory; charge density; dopant species; electron mobility; energy functional; impurity ion; scattering rate; Approximation methods; Doping; Electron mobility; Impurities; Indium phosphide; Microelectronics; Monte Carlo methods; Scattering; Semiconductor process modeling; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
ISSN :
1092-8669
Print_ISBN :
0-7803-3898-7
Type :
conf
DOI :
10.1109/ICIPRM.1997.600126
Filename :
600126
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3012921
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