DocumentCode
3012945
Title
A mixed-mode voltage-down converter with impedance adjustment circuitry for low-voltage wide-frequency DRAMs
Author
Ooishi, T. ; Komiya, Y. ; Hamade, K. ; Asakura, M. ; Yasuda, K. ; Furutani, K. ; Kato, T. ; Hidaka, H. ; Ozaki, H.
Author_Institution
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1995
fDate
8-10 June 1995
Firstpage
111
Lastpage
112
Abstract
In DRAMs a dramatic operation voltage reduction has been realized by the voltage-down converter (VDC) for a low power dissipation and high reliability. However, in the low-voltage and high-frequency domain this technique will see several crucial problems. Besides, the wide-frequency operation (e.g. an extended data output and a synchronous operation) and the variable-load current (e.g, a variable refresh cycle and a changeable data output) are required. This paper proposes VDC circuit techniques for the low-voltage (less than 2.5 V), wide-frequency, and the variable-load current. The mixed-mode VDC (MM-VDC) provides two-modes of current by the analog VDC (A-VDC) and the digital VDC (D-VDC) supply being suitable for the load current. It also reduces the current consumption in the VDC and guarantees stable operation. Moreover, the impedance adjustment circuitry (IAC) controls the current supply capability of the D-VDC according to the load operation frequency to minimize the bounce of the internal power supply level. The MM-VDC can be applicable to low-voltage wide-frequency DRAMs.
Keywords
CMOS memory circuits; DRAM chips; circuit stability; convertors; 2.5 V; LV wide-frequency DRAM; current consumption reduction; current supply capability; extended data output; high reliability; impedance adjustment circuitry; low power dissipation; low-voltage dynamic RAM; mixed-mode voltage-down converter; operation voltage reduction; stable operation; synchronous operation; variable refresh cycle; variable-load current; Capacitance; Circuits; Current supplies; Delay; Frequency; Impedance; MOSFETs; Power supplies; Ultra large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7800-2599-0
Type
conf
DOI
10.1109/VLSIC.1995.520710
Filename
520710
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